Faculty
Dr. Wang is a research professor and doctoral supervisor at the School of Microelectronics, Southern University of Science and Technology (SUSTech). She has published more than 80 high-level academic papers in mainstream international conferences/journals such as IJEM, Advanced Science, Device, IEEE EDL, ISPSD, APL, and has authorized / applied for more than 50 domestic invention patents and 5 PCT patents. Her main research focuses on the structure design and fabrication of GaN power and RF devices for 5G communication, smart power grids, and applications in new energy vehicles.
Educational Background
2013. Ph.D. Department of Materials Science and Engineering, South China University of Technology
2008. B.A. Department of Materials Science and Engineering, Southwest University
Professional Experiences
2023.8-Present，Research Professor, Southern University of Science and Technology
2019.4-2023.7，Research Associate Professor, Southern University of Science and Technology
2013.7-2018.12，Successively served as Divisional Manager, R&D manager, and Director of manufacturing department, Sino Nitride Semiconductor Ltd.
2013.9-2016.5，Postdoctor, Department of Physics, Sun Yat-Sen University
Research Interests
GaN devices & power system
GaN RF devices & power amplifier
GaN sensor
Honors & Awards
2023，Second Prize of Innovation Award of China Invention Association (ranked second)
2021，Distinctive Talent of Shenzhen City
2021，"Outstanding Communist Party Member", College of Engineering, Southern University of Science and Technology
2019，"Annual outstanding contribution award" of the third generation semiconductor industry technological innovation strategic alliance
Selected Publication：
1、Yi Deng, Yi Zhang*, Xinyuan Zhang, Yang Jiang, Xi Chen, Yansong Yang, Xin Tong, Yao Cai, Wenjuan Liu, Chengliang Sun, Dashan Shang, Qing Wang*, Hongyu Yu*, Zhongrui Wang*.MEMS Oscillators-Network-Based Ising Machine with Grouping Method. Advanced Science. 2024, 2310096.
2、Yang Jiang, Dingchen Wang, Ning Lin, Shuhui Shi, Yi Zhang, Shaocong Wang, Xi Chen, Hegan Chen, Yinan Lin, Kam Chi Loong, Jia Chen, Yida Li, Renrui Fang, Dashan Shang*, Qing Wang*, Hongyu Yu* and Zhongrui Wang*. Spontaneous Threshold Lowering Neuron using Second-Order Diffusive Memristor for Self-Adaptive Spatial Attention, Advanced Science, 2023, 2301323.
3、Yang Jiang, Shuhui Shi, Shaocong Wang, Fangzhou Du, Peiran Wang, Ning Lin, Wennao Li, Yi Zhang, Leiwei He, Robert Sokolovskij, Jiaqi He, Mujun Li, Dingchen Wang, Xi Chen, Qing Wang*, Hongyu Yu*, and Zhongrui Wang*. In-sensor Reservoir Computing for Gas Pattern Recognition using Pt-AlGaN/GaN HEMTs, Device, 2025, 3(1).
4、Yi Zhang, Zilong Xiong, Lewei He, Yang Jiang, Chenkai Deng, Fangzhou Du, Kangyao Wen, Chuying Tang, Qiaoyu Hu, Mujun Li, Xiaohui Wang, Wenhui Wang, Han Wang, Qing Wang*, Hongyu Yu*, Zhongrui Wang*. Electrically Reconfigurable Surface Acoustic Wave Phase Shifters Based on ZnO TFTs on LiNbO3 Substrate. International Journal of Extreme Manufacturing, 2025, 7(3): 035504.
5、Chu-Ying Tang, Hong-Hao Lu, Ze-Peng Qiao, Yang Jiang, Fang-Zhou Du, Jia-Qi He, Yu-Long Jiang*, Qing Wang*, and Hong-Yu Yu*, Ohmic Contact with a Contact Resistivity of 12 Ω·mm on p-GaN/AlGaN/GaN, IEEE Electron Device Letters, 2022.
6、ChuYing Tang, ChengKai Deng, Chun Fu, Jiaqi He, Fangzhou Du, Peiran Wang, Kangyao Wen,Yi Zhang, Yang Jiang, Nick Tao, Wenyue Yu, Qing Wang*, and HongYu Yu*. Low Contact Resistivity of< 10Ω· mm for Au-Free Ohmic Contact on p-GaN/AlGaN/GaN[J]. IEEE Electron Device Letters, 2024.
7、Yang Jiang, Wenmao Li, Fangzhou Du, Robert Sokolovskij, Yi Zhang, Shuhui Shi, Weiguo Huang, Qing Wang,* Hongyu Yu* and Zhongrui Wang*. Comprehensive review of gallium nitride (GaN)-based gas sensors and their dynamic responses, Journal of Materials Chemistry C, 2023,11, 10121-10148.
8、Yang Jiang, Fangzhou Du, Kangyao Wen, Jiaqi He, Mujun Li, Chuying Tang, Yi Zhang, Zhongrui Wang*, Qing Wang*, Hongyu Yu*.High VTH and Breakdown Enhancement-Mode GaN HEMTs for Power ICs Application Using Charge Trapping Layer. International Symposium On Power Semiconductor Devices And Ics (ISPSD), 2024.
9、Fangzhou Du, Yang Jiang, Peiran Wang, Kangyao Wen, Chuying Tang, Jiaqi He, Chenkai Deng, Yi Zhang, Mujun Li, Xiaohui Wang, Qiaoyu Hu, Wenyue Yu, Qing Wang*, HongYu Yu*. Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment[J]. Applied Physics Letters, 2025, 126(1).
10、Yang Jiang, FangZhou Du, KangYao Wen, JiaQi He, PeiRan Wang, MuJun Li, ChuYing Tang, Yi Zhang, ZhongRui Wang*, Qing Wang*, HongYu Yu*. Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters[J]. Applied Physics Letters, 2024, 124(24).